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DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Max. Triggerimpuls Glass case Glasgehause Weight approx. Gewicht ca. Dimensions / Mae in mm 28 ... 45 V 2A DO-35 SOD-27 0.13 g see page 16 siehe Seite 16 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Power dissipation - Verlustleistung Peak pulse current (120 pulse repetition rate) Max. Triggerstrom (120 Impulse) Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur TA = 50 /C tP # 10 :s Ptot IPM Tj TS Grenzwerte 150 mW 1) 2 A 1) - 40...+100/C - 40...+150/C Characteristics Breakover voltage Durchbruchspannung dV/dt = 10V/:s DB 3 DB 4 V = 98 % VBO *V(BO)F - V(BO)R* Kennwerte VBO VBO IBO )VBO )VF/R 28 ... 36 V 35 ... 45 V < 200 :A < 3.8 V >5V < 60 K/W 1) Breakover current - Durchbruchstrom Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannug Foldback voltage - Spannungs-Rucksprung )I = IBO to/auf IF = 10 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft dV/dt = 10V/:s RthA 1 ) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gultig, wenn die Anschludrahte in 10 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden 420 01.10.2002 DB 3, DB 4 Typical characteristic of a DIAC - Typische DIAC-Kennlinie Test circuit for a thyristor trigger - Meschaltung fur Thyristor-Zundschaltung 01.10.2002 421 |
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